KBTEM-OMO – Joint Stock Company

Advanced optical based solutions for photomask and wafer patterning, automated inspection and mask repair

KBTEM-OMO Joint Stock Company (“KBTEM-OMO” JSC) started its activity in 1962 as an optical-mechanical equipment division of KBTEM (Design Office for Precision Electronic Engineering). December, 16, 1991 in accordance with the order of the Ministry of Industry of the Republic of Belarus #82, Scientific and Production Republican Unitary Enterprise KBTEM-OMO was set up with a legal entity status as part of the State Scientific and Production Corporation for Precision Engineering Planar. From 2011 KBTEM-OMO is officially acknowledged as Scientific Institution by the State Committee on Science and Technology of the Republic of Belarus and National Academy of Science of Belarus. January 23, 2014 the Republican Unitary Scientific and Production Enterprise KBTEM-OMO was transformed into a Joint Stock Company «KBTEM-OMO» («KBTEM-OMO» JSC).

The main line of activity of KBTEM-OMO is the scientific and technological development as well as production of special opto-mechanical, process, inspection and measurement equipment.

Equipment For Direct Writing

Pattern generators are considered to be complex tools in manufacturing of semiconductor devices. High requirements to such equipment can be met only with the help of high-end technology.

KBTEM-OMO has extensive experience in the development of opto-mechanical equipment. The model line of multichannel laser pattern generators for microelectronics built on the raster scan concept is characterized by exceptional functional features:

  • direct writing on wafers (maskless optical lithography);
  • overlay option;
  • high throughput;
  • process switch to mask writing mode.

The universality of such high-performance equipment makes it indispensable for scientific institutions and microelectronics manufacturers.

EM-5389 MULTICHANNEL LASER PATTERN GENERATOR

Pattern generators provide possibility for pattern writing on semiconductor substrates with simultaneous previous layers alignment (maskless optical lithography). The patterning is based on a raster scanning principle.

Minimum feature size, nm 200
Exposure time of 100×100 mm area, min 60
Exposure field size, mm 215×215
Overlay accuracy, nm 50
Edge roughness, nm 20
Address grid increment, nm 1.25
EM-5289B MULTICHANNEL LASER PATTERN GENERATOR

Pattern generators provide possibility for pattern writing on semiconductor substrates with simultaneous previous layers alignment (maskless optical lithography). The patterning is based on a raster scanning principle.

Minimum feature size, nm 350
Exposure time of 100×100 mm area, min 120
Exposure field size, mm 215×215
Overlay accuracy, nm 60
Edge roughness, nm 30
Address grid increment, nm 1.25
EM-5189-02 MULTICHANNEL LASER PATTERN GENERATOR

Pattern generators provide possibility for pattern writing on semiconductor substrates with simultaneous previous layers alignment (maskless optical lithography). The patterning is based on a raster scanning principle.

The EМ-5189-02 exposure system uses a continuous ultraviolet semiconductor laser with optical pumping at 355nm wavelength. Laser output power: 250 mW.
Model: Coherent Genesis CX 355-250 STM. MTBF is 20000 hours (~10 years). This laser model reduces the power consumption to 5 kW.

Minimum feature size, nm 600
Exposure time of 100×100 mm area, min 60
Exposure field size, mm 215×215
Overlay accuracy, nm 70
Edge roughness, nm 40
Address grid increment, nm 1.25
Tools For Proximity Exposure and Double-Side Lithography

EM-5026xx series and EM-5096 tools are intended for pattern alignment on photomasks and wafers (substrates) and further transfer of this pattern from mask to wafer through contact (proximity) exposure of wafer photoresistive layer.

Main features:
– wedge compensation and wafer thickness compensation without contact with the photomask;
– 3 coordinates (X, Y, Q) high precision wafer manipulator with coarse and fine alignment modes;
– ability to handle 0.2 mm to 0.8 mm wafers made of fragile materials (GaAs, LiNbO3) and rectangular substrates;
– built-in vibration protection unit;
– energy saving mode.

EМ-5026АМ Mask Aligner

EМ-5026АМ MASK ALIGNER

EM-5026AM system is designed to align the photomask pattern with the wafer (substrate) pattern and to transfer the pattern from the photomask onto the wafer (substrate) through contact (proximity) exposure of the wafer photoresist layer.

EM-5026AM features the following automatic systems:
– wafer loading from a cassette;
– centering and orientation with reference to primary flat;
– preliminary fine orientation;
– wafer loading on a chuck;
– wafer wedge and thickness compensation without contact with the photomask;
– operator controlled alignment proximity;
– alignment mark alignment error definition on photomasks and wafers;
– exposure of wafer photoresist layer;
– unloading to another cassette;
– energy saving mode.

Specifications 

Working wavelengths*, nm 225-260; 280-335; 350-450
Photolithography resolution, µm 0.4 … 0.7
Illumination uniformity across 110 mm diameter working field, % ±2.5
Alignment accuracy random component, μm ±0.1
Wafer diameter*, mm 50; 60; 76; 100; 60×48
Mask size*, mm 102×102;127×127
Alignment manipulator drive sensitivity:
– along X, Y, μm 0.01
– angular, seconds 0.1
Microscope with two split fields of view and smooth magnification adjustment:
– OM 0.4/8 objectives and 10x eyepieces 150х … 480х
– OM 0.2/14 objectives and 10x eyepieces 90х … 250х
Power consumption, not more than, W 800

*Subject to customer requirements
EM-5096 Mask aligner

EM-5096 MASK ALIGNER

EM-5096 system is designed to align the photomask pattern and the wafer pattern and to transfer the pattern from the photomask onto the wafer through the contact (proximity) exposure of the wafer photoresist layer.

EM-5096 features the following automatic systems:
– wafer wedge and thickness compensation without contact with the photomask;
– operator controlled alignment proximity;
– wafer photoresist exposure;
– energy saving mode;
– alignment mark alignment error definition on photomasks and wafers.

Double field microscope with smooth magnification adjustment.

Loading-unloading of wafers and substrates onto the chuck is performed by the operator manually.

  Specifications 

Working wavelengths*, nm 225-260; 280-335; 350-450
Photolithography resolution, µm 0.4 … 0.6
Illumination uniformity across 76-mm diameter working field, % ±2
Alignment accuracy random component, μm ±0.1
Wafer diameter*, mm 76 (16, 20, 25, 30, 40, 50, 60) 60×48; 48×30
Mask size*, mm 76×76; 102х102
Alignment manipulator drive sensitivity:
– along X, Y, μm 0.01
– angular, seconds 0.1
Double field microscope with smooth magnification adjustment:
– OM 0.4/8 objectives and 10x eyepieces 150х … 480х
– OM 0.2/14 objectives and 10x eyepieces 90х … 250х
Power consumption, not more than, W 800

*Subject to customer requirements
EМ-5026М1 Mask Aligner

EM-5026M1 MASK ALIGNER

EM-5026M1 system is designed to align the photomask pattern with the wafer (substrate) pattern and to transfer the pattern from the photomask onto the wafer through contact (proximity) exposure of the wafer (substrate) photoresist layer.

EM-5026M1 features the following automatic systems:
– wafer wedge and thickness compensation without contact with the photomask;
– alignment proximity control;
– wafer photoresist exposure;
– energy saving mode.

Single field microscope with smooth magnification adjustment. 

Loading-unloading of wafers and substrates onto the chuck is performed by the operator manually. 

  Specifications 

Working wavelengths*, nm 225-260; 280-335; 350-450
Photolithography resolution, µm 0.4 … 0.6
Illumination uniformity across 76-mm diameter working field,% ±2
Alignment accuracy random component, μm ±0.1
Wafer diameter*, mm 76 (16, 20, 25, 30, 40, 50, 60); 60×48; 48×30
Mask size*, mm 76×76; 102х102
Alignment manipulator drive sensitivity:
– along X, Y, μm 0.01
– angular, seconds 0.1
Single field microscope with smooth magnification adjustment.
Magnification with 10x eyepieces 120x, 320x, 485x
Power consumption, not more than, W 800

*Subject to customer requirements
EМ-5026B Double-Side Mask Aligner

EМ-5026B DOUBLE-SIDE MASK ALIGNER

The EM-5026B system is designed to perform a contact (proximity) exposure of the top (front) side of a wafer or a substrate through alignment of the photomask pattern with the pattern on the bottom (back) side of the wafer or substrate.

EM-5026B features the following automatic systems:
– high precision pre-orientation;
– wafer loading/unloading on a chuck;
– wafer wedge and thickness compensation without contact with the photomask;
– automatic alignment proximity adjustment;
– photoresistive layer exposure on wafers;
– energy saving mode.

Semiautomatic wafer loading/unloading.

  Specifications 

Working wavelengths*, nm 225-260; 280-335; 350-450
Photolithography resolution, µm 0.4 … 1.0
Illumination uniformity across 110 mm diameter working field, % ±2.5
Alignment accuracy random component:
– one side alignment, µm ±0.2
– with reference to marks on the back side, µm ±1
Wafer diameter*, mm 40; 50; 60; 76; 100
Mask size*, mm 76×76; 102×102;127×127
Alignment manipulator drive sensitivity:
– along X, Y, µm 0.01
– angular, seconds 0.1
Power consumption, not more than, W 900

*Subject to customer requirements
EM-5186 Double-side alignment mark placement system

EM-5186 DOUBLE-SIDE ALIGNMENT MARK PLACEMENT SYSTEM

The EM-5186 system is designed for mark placement on the bottom side of the wafer (substrate). The mark is aligned with alignment marks on the top side of the wafer (substrate).

The system allows to manufacture double side lithography wafers (substrates) with traditional lithography equipment.

The tool can be used for manufacturing of semiconductor devices, hydrid, optical, optoelectronic and other devices, MEMS, MOEMS.

EM-5186 allows to form marks on transparent substrates.

  Specifications 

Substrate size*, mm Ø76; 100; 150; 200; 60х48
Substrate thickness, mm 0.3 … 10
Random component of marks alignment accuracy on both sides of the substrate, µm 0.3
Power supply/Power supply frequency, V/Hz 230/50 … 60
Power consumption, not more than, W 300
Weight, not more than, kg 250

*Subject to customer requirements

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